Silicon p-n junction photodiodes with platinum silicide front entrance windows have been developed by International Radiation Detectors for detection of XUV photons (energy range 4 eV to 12 keV). These devices have been specifically developed for photon detection with high flux levels like those encountered in the third and the fourth generation synchrotrons and the excimer lasers.

Silicon p-n junction photodiodes (UVG-series) with 100% photogenerated carrier collection efficiency have been developed by International Radiation Detectors for detection of near ultraviolet and vacuum ultraviolet (600 - 160 nm) photons. These have zero surface recombination resulting in near theoretical quantum efficiencies to UV and visible photons.

Silicon p-n junction photodiodes (AXUV-series) have been developed by International Radiation Detectors for applications in the vacuum ultraviolet, extreme ultraviolet and the soft x-ray (XUV,wavelength range 1800 Å to 2 Å, energy range 7 eV to 6000 eV) spectral region. These diodes have zero surface recombination resulting in near theoretical quantum efficiencies for XUV photons and other low energy particles.